BFS25 Просмотр технического описания (PDF) - Philips Electronics
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BFS25 Datasheet PDF : 11 Pages
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Philips Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFS25A
4
handbook, halfpage
F
(dB)
3
2
MCD145
f = 2 GHz
1 GHz
500 MHz
1
0
10−1
1
10
IC (mA)
VCE = 1 V; Tamb = 25 °C.
Fig.10 Minimum noise figure as a function of
collector current.
4
handbook, halfpage
F
(dB)
3
2
1
MCD146
IC = 2 mA
1 mA
0.5 mA
0
102
103
104
f (MHz)
VCE = 1 V; Tamb = 25 °C.
Fig.11 Minimum noise figure as a function of
frequency.
handbook, full pagewidth
pot. unst.
region
135°
0.5
stability
circle
0.2
MSG = 13.9 dB
180° 0
0.2
0.5
12 dB
0.2
10 dB
90°
1.0
1
2
45°
0.8
0.6
0.4
5
ΓOPT
0.2
1
2
5
0° 0
F = 2.5 dB
F = 4 dB
F = 6 dB
5 Fmin = 1.9 dB
IC = 1 mA; VCE = 1 V;
f = 500 MHz; Zo = 50 Ω.
0.5
−135°
1
−90°
2
−45°
MRC075
1.0
Fig.12 Noise circle.
December 1997
6
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