BFS25 Просмотр технического описания (PDF) - Philips Electronics
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BFS25 Datasheet PDF : 11 Pages
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Philips Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFS25A
FEATURES
• Low current consumption
• Low noise figure
• Gold metallization ensures
excellent reliability
• SOT323 envelope.
PINNING
PIN
DESCRIPTION
Code: N6
1 base
2 emitter
3 collector
DESCRIPTION
NPN transistor in a plastic SOT323
envelope.
It is designed for use in RF amplifiers
and oscillators in pagers and pocket
phones with signal frequencies up to
2 GHz.
handbook, 2 columns
3
1
Top view
2
MBC870
Fig.1 SOT323.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VCEO
IC
Ptot
hFE
fT
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
GUM
maximum unilateral power gain
F
noise figure
CONDITIONS
open emitter
open base
up to Ts = 170 °C; note 1
IC = 0.5 mA; VCE = 1 V; Tj = 25 °C
IC = 1 mA; VCE = 1 V; f = 1 GHz;
Tamb = 25 °C
Ic = 0.5 mA; VCE = 1 V; f = 1 GHz;
Tamb = 25 °C
Ic = 0.5 mA; VCE = 1 V; f = 1 GHz;
Tamb = 25 °C
MIN.
−
−
−
−
50
3.5
−
−
TYP.
−
−
−
−
80
5
13
1.8
MAX.
8
5
6.5
32
200
−
−
−
UNIT
V
V
mA
mW
GHz
dB
dB
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
Ptot
Tstg
Tj
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
up to Ts = 170 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector tab.
MIN.
−
−
−
−
−
−65
−
MAX.
8
5
2
6.5
32
150
175
UNIT
V
V
V
mA
mW
°C
°C
December 1997
2
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