BFS25 Просмотр технического описания (PDF) - Philips Electronics
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BFS25 Datasheet PDF : 11 Pages
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Philips Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFS25A
In Figs 6 to 9, GUM = maximum unilateral power gain;
MSG = maximum stable gain; Gmax = maximum available
gain.
handbook, 2h5alfpage
gain
(dB)
20
G UM
MRC035
20
handbook, halfpage
G UM
(dB)
16
12
MRC036
VCE = 3 V
1V
15
8
MSG
10
4
5
0
0
0.5
1
1.5
VCE = 1 V; f = 500 MHz; Tamb = 25 °C.
2
2.5
IC (mA)
Fig.6 Gain as a function of collector current.
0
0
0.5
1
1.5
2
2.5
IC (mA)
f = 1 GHz; Tamb = 25 °C.
Fig.7 Maximum unilateral power gain as a
function of collector current.
handbook, 5h0alfpage
gain
(dB)
40
30
20
10
0
0.01
G UM
MRC034
MSG
G max
0.1
1
10
f (GHz)
IC = 0.5 mA; VCE = 1 V; Tamb = 25 °C.
Fig.8 Gain as a function of frequency.
December 1997
50
handbook, halfpage
gain
(dB)
40
30
20
10
0
10−2
G UM
MSG
10−1
MRC033
G max
1
10
f (GHz)
IC = 1 mA; VCE = 1 V; Tamb = 25 °C.
Fig.9 Gain as a function of frequency.
5
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