BFS25 Просмотр технического описания (PDF) - Philips Electronics
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BFS25 Datasheet PDF : 11 Pages
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Philips Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFS25A
THERMAL RESISTANCE
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to Ts = 170 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C, unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
hFE
Cre
fT
GUM
F
collector cut-off current
DC current gain
feedback capacitance
transition frequency
maximum unilateral power gain
(note 1)
noise figure
IE = 0; VCB = 5 V
IC = 0.5 mA; VCE = 1 V
IC = 0; VCB = 1 V; f = 1 MHz
IC = 1 mA; VCE = 1 V; f = 1 GHz;
Tamb = 25 °C
IC = 0.5 mA; VCE = 1 V; f = 1 GHz;
Tamb = 25 °C
Γs = Γopt; IC = 0.5 mA; VCE = 1 V;
f = 1 GHz; Tamb = 25 °C
Γs = Γopt; IC = 1 mA; VCE = 1 V;
f = 1 GHz; Tamb = 25 °C
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
GUM = 10 log ----1-----–------S----1---1----2S----2---1---1-2----–------S----2--2-----2---- dB.
THERMAL RESISTANCE
190 K/W
MIN. TYP. MAX. UNIT
−
−
50 nA
50 80 200
−
0.3 0.45 pF
3.5 5
−
GHz
−
13 −
dB
−
1.8 −
dB
−
2
−
dB
December 1997
3
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