BFR93AT Просмотр технического описания (PDF) - Philips Electronics
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BFR93AT Datasheet PDF : 16 Pages
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Philips Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFR93AT
CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
hFE
DC current gain
Cc
collector capacitance
Ce
emitter capacitance
Cre
feedback capacitance
fT
transition frequency
GUM
maximum unilateral power
gain
F
noise figure
CONDITIONS
IE = 0; VCB = 5 V
IC = 30 mA; VCE = 5 V
IE = ie = 0; VCB = 5 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = 0; VCE = 5 V; f = 1 MHz
IC = 30 mA; VCE = 5 V; f = 500 MHz
IC = 30 mA; VCE = 8 V; Tamb = 25 °C;
note 1;
f = 1 GHz
f = 2 GHz
IC = 5 mA; VCE = 8 V; Γs = Γopt;
f = 1 GHz
f = 2 GHz
MIN.
−
40
−
−
−
4
TYP.
−
90
0.7
2.3
0.6
5
MAX. UNIT
50
nA
−
−
pF
−
pF
−
pF
−
GHz
−
13
−
dB
−
8
−
dB
−
1.5 −
dB
−
2.1 −
dB
Note
1. GUM is the maximum unilateral power gain, assuming s12 is zero and GUM = 10 log -(--1-----–------S----1---1---S-2---)-2--(1--1--2---–------S----2---2----2---) dB
2000 Mar 09
4
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