BFR93AT Просмотр технического описания (PDF) - Philips Electronics
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BFR93AT Datasheet PDF : 16 Pages
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Philips Semiconductors
NPN 5 GHz wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
Tstg
Tj
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
CONDITION
open emitter
open base
open collector
Ts ≤ 75 °C; see Fig.2
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to soldering point
Product specification
BFR93AT
MIN.
−
−
−
−
−
−65
−
MAX. UNIT
15
V
12
V
2
V
35
mA
150 mW
+150 °C
150 °C
VALUE
500
UNIT
K/W
200
Ptot
(mW)
150
MGU068
100
50
0
0
50
100
150
200
Ts (°C)
Fig.2 Power derating curve.
2000 Mar 09
3
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