BFR93AT Просмотр технического описания (PDF) - Philips Electronics

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BFR93AT

NPN 5 GHz wideband transistor

Philips Electronics 

Philips Semiconductors

NPN 5 GHz wideband transistor

Product specification

BFR93AT

FEATURES

• High power gain

• Gold metallization ensures

excellent reliability

• SOT416 (SC-75) package.

APPLICATIONS

Designed for use in RF amplifiers,

mixers and oscillators with signal

frequencies up to 1 GHz.

DESCRIPTION

Silicon NPN transistor encapsulated

in a plastic SOT416 (SC-75) package. fpage

3

The BFR93AT uses the same die as

the SOT23 version: BFR93A.

PINNING

PIN

DESCRIPTION

1 base

2 emitter

3 collector

1

Top view

2

MBK090

Marking code: R2.

Fig.1 SOT416.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

VCBO

VCEO

IC

Ptot

hFE

Cre

fT

GUM

F

Tj

collector-base voltage

collector-emitter voltage

collector current (DC)

total power dissipation

DC current gain

feedback capacitance

transition frequency

maximum unilateral power gain

noise figure

junction temperature

open emitter

−

open base

−

−

Ts ≤ 75 °C; note 1

−

IC = 30 mA; VCE = 5 V

40

IC = 0; VCE = 5 V; f = 1 MHz;

−

Tamb = 25 °C

IC = 30 mA; VCE = 5 V; f = 500 MHz 4

IC = 30 mA; VCE = 8 V; Tamb = 25 °C;

f = 1 GHz

−

f = 2 GHz

−

IC = 5 mA; VCE = 8 V; f = 1 GHz;

−

Γs = Γopt

−

−

15

V

−

12

V

−

35

mA

−

150 mW

90

−

0.6 −

pF

5

−

GHz

13

−

dB

8

−

dB

1.5 −

dB

−

150 °C

Note

1. Ts is the temperature at the soldering point of the collector pin.

2000 Mar 09

2

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