BF1215 Просмотр технического описания (PDF) - NXP Semiconductors.

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BF1215

Dual N-channel dual gate MOSFET

NXP Semiconductors. 

NXP Semiconductors

BF1215

Dual N-channel dual gate MOSFET

30

|yfs|

(mS)

20

001aal551

(1)

(2)

(3)

(4)

16

ID(A)

(mA)

12

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8

10

(5)

4

(6)

0

0

5

10

15

20

25

ID (mA)

(1) VG2-S = 4 V.

(2) VG2-S = 3.5 V.

(3) VG2-S = 3 V.

(4) VG2-S = 2.5 V.

(5) VG2-S = 2 V.

(6) VG2-S = 1.5 V.

VDS(A) = 5 V; VG1-S(B) = VDS(B) = 0 V; Tj = 25 °C.

Fig 5. Amplifier A forward transfer admittance as a

function of drain current; typical values

0

0

20

40

60

ID(B) (μA)

VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = 5 V; VG1-S(B) = 0 V;

Tj = 25 °C.

ID(B) = internal gate1 current = current on pin

drain (amplifier B) if MOSFET (B) is switched off.

Fig 6. Amplifier A drain current as a function of

internal gate1 current; typical values

BF1215_1

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 01 — 6 May 2010

© NXP B.V. 2010. All rights reserved.

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