BF1215 Просмотр технического описания (PDF) - NXP Semiconductors.
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BF1215 Datasheet PDF : 22 Pages
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NXP Semiconductors
BF1215
Dual N-channel dual gate MOSFET
20
ID
(mA)
15
001aal553
40
ID
(mA)
30
001aal554
(1)
10
5
0
0
1
2
3
4
5
Vsup (V)
VDS(A) = VDS(B) = Vsup; VG2-S = 4 V; Tj = 25 °C;
RG1 = 39 kΩ (connected to ground); see Figure 2.
Fig 7.
Amplifier A drain current as a function of the
supply voltage to amplifiers A and B;
typical values
(2)
20
(3)
(4)
10
(5)
(6)
0
0
1
2
3
4
5
VG2-S (V)
(1) VDS(B) = 4 V.
(2) VDS(B) = 3.5 V.
(3) VDS(B) = 3 V.
(4) VDS(B) = 2.5 V.
(5) VDS(B) = 2 V.
(6) VDS(B) = 1.5 V.
VDS(A) = 5 V; VG1-S(B) = 0 V; gate1 (amplifier A) is open;
Tj = 25 °C.
Fig 8. Amplifier A drain current as a function of gate2
voltage; typical values
120
Xmod
(dBμV)
110
001aal555
0
gain
reduction
(dB)
10
001aal556
20
100
30
90
40
80
0
10
20
30
40
50
gain reduction (dB)
Fig 9.
VDS(A) = VDS(B) = 5 V; VG1-S(B) = 0 V; fw = 50 MHz;
funw = 60 MHz; Tamb = 25 °C; see Figure 32.
Amplifier A unwanted voltage for 1 %
cross modulation as a function of gain
reduction; typical values
50
0
1
2
3
4
VAGC (V)
VDS(A) = VDS(B) = 5 V; VG1-S(B) = 0 V; f = 50 MHz;
Tj = 25 °C; see Figure 32.
Fig 10. Amplifier A gain reduction as a function of
AGC voltage; typical values
BF1215_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 6 May 2010
© NXP B.V. 2010. All rights reserved.
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