BF1215 Просмотр технического описания (PDF) - NXP Semiconductors.
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BF1215 Datasheet PDF : 22 Pages
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NXP Semiconductors
BF1215
Dual N-channel dual gate MOSFET
4. Marking
Table 4. Marking
Type number
BF1215
Marking
M4p
M4t
M4w
Description
made in Hong Kong
made in Malaysia
made in China
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per MOSFET
VDS
drain-source voltage
ID
drain current
IG1
gate1 current
IG2
gate2 current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
DC
DC
Tsp ≤ 107 °C
-
-
-
-
[1] -
−65
-
[1] Tsp is the temperature at the soldering point of the source lead.
Max
6
30
±10
±10
180
+150
150
Unit
V
mA
mA
mA
mW
°C
°C
250
Ptot
(mW)
200
150
100
50
0
0
50
Fig 1. Power derating curve
001aac193
100
150
200
Tsp (˚C)
BF1215_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 6 May 2010
© NXP B.V. 2010. All rights reserved.
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