BF1215 Просмотр технического описания (PDF) - NXP Semiconductors.
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BF1215 Datasheet PDF : 22 Pages
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NXP Semiconductors
BF1215
Dual N-channel dual gate MOSFET
10
bos, gos
(mS)
1
001aal561
bos
10−1
gos
10−2
10
102
103
f (MHz)
VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V; ID(A) = 19 mA; Tj = 25 °C.
Fig 15. Amplifier A output admittance as a function of frequency; typical values
8.2 Scattering parameters for amplifier A
Table 9. Scattering parameters for amplifier A
VDS(A) = 5 V; VG2-S = 4 V; ID(A) = 19 mA; VDS(B) = 0 V; VG1-S(B) = 0 V; Tamb = 25 °C; typical values.
f (MHz)
s11
s21
s12
s22
Magnitude Angle
(ratio)
(degree)
Magnitude Angle
(ratio)
(degree)
Magnitude Angle
(ratio)
(degree)
Magnitude
(ratio)
50
0.992
−4.61
2.80
175.87
0.00078 95.65
0.993
100
0.991
−8.79
2.80
172.12
0.00145 83.73
0.994
200
0.986
−17.57
2.77
164.25
0.00292 78.53
0.992
300
0.977
−26.11
2.74
156.52
0.00415 73.60
0.991
400
0.966
−34.46
2.69
148.98
0.00528 69.27
0.989
500
0.952
−42.75
2.64
141.49
0.00620 64.79
0.986
600
0.936
−50.92
2.58
134.13
0.00691 60.71
0.984
700
0.920
−58.79
2.50
127.01
0.00733 57.37
0.982
800
0.902
−66.40
2.43
120.04
0.00758 54.40
0.979
900
0.881
−73.87
2.36
113.24
0.00763 52.13
0.978
1 000
0.861
−81.10
2.28
106.69
0.00749 50.46
0.976
Angle
(degree)
−1.38
−2.76
−5.50
−8.21
−10.91
−13.58
−16.22
−18.86
−21.47
−24.00
−26.55
8.3 Noise data for amplifier A
Table 10. Noise data for amplifier A
VDS(A) = 5 V; VG2-S = 4 V; ID(A) = 19 mA; VDS(B) = 0 V; VG1-S(B) = 0 V; Tamb = 25 °C; typical values;
unless otherwise specified.
f (MHz)
NFmin (dB)
Γopt
(ratio)
(degree)
rn (ratio)
400
0.9
0.810
27.95
0.884
800
1.4
0.697
56.50
0.717
BF1215_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 6 May 2010
© NXP B.V. 2010. All rights reserved.
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