BF1208D Просмотр технического описания (PDF) - Philips Electronics
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BF1208D Datasheet PDF : 22 Pages
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NXP Semiconductors
BF1208D
Dual N-channel dual gate MOSFET
1.4 Quick reference data
Table 1. Quick reference data
Per MOSFET unless otherwise specified.
Symbol Parameter
Conditions
VDS
ID
Ptot
|yfs|
Ciss(G1)
drain-source voltage
drain current
total power dissipation
forward transfer admittance
input capacitance at gate1
DC
DC
Tsp ≤ 109 °C
f = 100 MHz; Tj = 25 °C
amplifier A; ID = 19 mA
amplifier B; ID = 15 mA
f = 100 MHz
amplifier A
amplifier B
Crss
reverse transfer capacitance f = 100 MHz
NF
noise figure
YS = YS(opt)
amplifier A; f = 400 MHz
amplifier B; f = 800 MHz
Xmod cross modulation
input level for k = 1 %;
fw = 50 MHz;
funw = 60 MHz
at 40 dB AGC
amplifier A
amplifier B
Tj
junction temperature
Min Typ
--
--
[1] -
-
26 31
25 30
[2] -
2.1
[2] -
2.1
[2] -
30
- 0.9
- 1.4
[3] 102 105
[4] 102 105
--
Max Unit
6V
30 mA
180 mW
41 mS
40 mS
2.6 pF
2.6 pF
- fF
1.5 dB
2.0 dB
- dBµV
- dBµV
150 °C
[1] Tsp is the temperature at the soldering point of the source lead.
[2] Calculated from S-parameters.
[3] Measured in Figure 33 test circuit.
[4] Measured in Figure 34 test circuit.
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Discrete pinning
Description
gate1 (AMP A)
gate2
gate1 (AMP B)
drain (AMP B)
source
drain (AMP A)
Simplified outline Symbol
654
AMP A
G1A
DA
G2
S
123
BF1208D_1
Product data sheet
Rev. 01 — 16 May 2007
G1B
DB
AMP B
sym089
© NXP B.V. 2007. All rights reserved.
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