BF1208D Просмотр технического описания (PDF) - Philips Electronics
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BF1208D Datasheet PDF : 22 Pages
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NXP Semiconductors
BF1208D
Dual N-channel dual gate MOSFET
8.2 Dynamic characteristics for amplifier B
Table 11. Dynamic characteristics for amplifier B[1]
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 15 mA; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
|yfs|
Ciss(G1)
Ciss(G2)
Coss
Crss
Gtr
NF
Xmod
forward transfer admittance f = 100 MHz; Tj = 25 °C
input capacitance at gate1 f = 100 MHz
25
[2] -
input capacitance at gate2 f = 100 MHz
[2] -
output capacitance
f = 100 MHz
[2] -
reverse transfer capacitance f = 100 MHz
[2] -
transducer power gain
BS = BS(opt); BL = BL(opt)
f = 200 MHz; GS = 2 mS; GL = 0.5 mS
31
f = 400 MHz; GS = 2 mS; GL = 1 mS
28
f = 800 MHz; GS = 3.3 mS; GL = 1 mS
26
noise figure
f = 11 MHz; GS = 20 mS; BS = 0 S
-
f = 400 MHz; YS = YS(opt)
-
cross modulation
f = 800 MHz; YS = YS(opt)
-
input level for k = 1 %; fw = 50 MHz; funw = 60 MHz [3]
at 0 dB AGC
90
30
2.1
3.4
0.85
30
35
32
30
3
1.1
1.4
-
at 10 dB AGC
- 90
at 20 dB AGC
- 98
at 40 dB AGC
102 105
Max Unit
40 mS
2.6 pF
- pF
- pF
- fF
39 dB
36 dB
34 dB
- dB
1.7 dB
2.0 dB
- dBµV
- dBµV
- dBµV
- dBµV
[1] For the MOSFET not in use: VG1-S(A) = 0 V; VDS(A) = 0 V.
[2] Calculated from S-parameters.
[3] Measured in Figure 34 test circuit.
BF1208D_1
Product data sheet
Rev. 01 — 16 May 2007
© NXP B.V. 2007. All rights reserved.
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