BDX16 Просмотр технического описания (PDF) - Inchange Semiconductor

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BDX16

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

BDX16

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -100mA; IB= 0

-140

V

V(BR)CER Collector-Emitter Breakdown Voltage IC= -100mA; RBE= 100Ω

-150

V

V(BR)CEX Collector-Emitter Breakdown Voltage IC= -100mA; VBE= 1.5V

-160

V

VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB=B -50mA

VBE(on) Base-Emitter On Voltage

ICEX

Collector Cutoff Current

IEBO

Emitter Cutoff Current

IC= -0.5A; VCE= -4V

VCE= -140V;VBE= 1.5V

VCE= -140V;VBE= 1.5V,TC=150℃

VEB= -7V; IC= 0

-1.0

V

-1.7

V

-1.0

-5.0

mA

-1.0 mA

hFE

DC Current Gain

IC= -0.5A; VCE= -4V

20

80

fT

Current Gain-Bandwidth Product

IC= -0.2A; VCE= -10V

4

MHz

isc Website：www.iscsemi.cn

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