BDX16 Просмотр технического описания (PDF) - Inchange Semiconductor

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BDX16

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

BDX16

DESCRIPTION

·Contunuous Collector Current-IC= -3A

·Collector Power Dissipation-

: PC= 25W @TC= 25℃

Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= -140V(Min)

APPLICATIONS

·Designed for use in general purpose switching and linear

amplifier applications requiring high breakdown voltages.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-160

V

VCER

Collector-Emitter Voltage RBE= 100Ω

-150

V

VCEO

Collector-Emitter Voltage

-140

V

VEBO

Emitter-Base Voltage

-7

V

IC

Collector Current-Continuous

-3

A

ICM

Collector Current-Peak

-4

A

IBB

Base Current-Continuous

-2

A

PC

Collector Power Dissipation@TC=25℃

25

W

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature

-65~200 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance,Junction to Case

MAX UNIT

7.0 ℃/W

isc Website：www.iscsemi.cn

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