ACST2 Просмотр технического описания (PDF) - STMicroelectronics
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ACST2 Datasheet PDF : 11 Pages
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Characteristics
ACST2 Series
Figure 3.
IT(RMS)(A)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
RMS on-state current versus
ambient temperature
α=180 °
Printed circuit board FR4
Natural convection
SCU=0.5 cm²
Tamb(°C)
25
50
75
100
125
Figure 4.
Relative variation of thermal
impedance versus pulse duration -
TO-220FPAB
K=[Zth/Rth]
1.00
Zth(j-c)
0.10
Zth(j-a)
0.01
1.0E-04
1.0E-03
1.0E-02
tP(s)
TO-220FPAB
1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
Figure 5.
Relative variation of thermal
Figure 6.
impedance versus pulse duration -
DPAK
Relative variation of gate trigger
current IGT, holding current IH and
latching current IL versus junction
temperature (typical values)
K=[Zth/Rth]
1.0E+00
Zth(j-c)
1.0E-01
Zth(j-a)
1.0E-02
1.0E-04
1.0E-03
1.0E-02
tP(s)
DPAK
1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
IGT, IH, IL [TJ] / IGT, IH, IL [Tj=25 °C]
2.8
2.6
2.4
IGT
2.2
2.0
1.8
1.6 IL & IH
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Tj(°C)
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
Figure 7. Relative variation of static dV/dt
versus junction temperature
dV/dt [Tj] / dV/dt [Tj=125 °C]
100
VOUT=540 V
10
Tj(°C)
1
25
50
75
100
125
Figure 8.
Relative variation of critical rate of
decrease of main current versus
reapplied dV/dt (typical values)
(dI/dt)c [ (dV/dt)c ] / Specified (dI/dt)c
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
(dV/dt)c(V/µs)
1.0
10.0
VOUT=300 V
100.0
4/11
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