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Номер в каталоге
Компоненты Описание
2SK3113 Просмотр технического описания (PDF) - NEC => Renesas Technology
Номер в каталоге
Компоненты Описание
производитель
2SK3113
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
2SK3113 Datasheet PDF : 8 Pages
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8
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3)
6.5 ±0.2
5.0 ±0.2
4
123
1.1 ±0.2
2.3 ±0.2
0.5 ±0.1
2.3 2.3
0.5
+0.2
−
0.1
0.5
+0.2
−
0.1
1. Gate
2. Drain
3. Source
4. Fin (Drain)
2SK3113
2) TO-252 (MP-3Z)
6.5 ±0.2
5.0 ±0.2
4
2.3 ±0.2
0.5 ±0.1
123
1.1 ±0.2
2.3 2.3
0.9 0.8
MAX. MAX.
0.8
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Data Sheet D13336EJ3V0DS
7
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