2SK3113 Просмотр технического описания (PDF) - NEC => Renesas Technology
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2SK3113 Datasheet PDF : 8 Pages
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2SK3113
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
9
8
ID = 2 A
7
6
1A
5
4
3
2
1
0
−50
VGS = 10 V
0
50
100
150
Tch - Channel Temperature - ˚C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
1000
Ciss
100
Coss
10
VGS = 0 V
f = 1 MHz
1
0.1
1
Crss
10
100
VDS - Drain to Source Voltage - V
10000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 50 A/µs
VGS = 0 V
1000
100
10
0.1
1.0
10
100
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
1.0
VGS = 10 V
0.1
0V
Pulsed
0
0.5
1.0
1.5
VF(S-D) - Source to Drain Voltage - V
SWITCHING CHARACTERISTICS
100
td(off)
10
tf
td(on)
tr
1
0.1
0.1
VDD = 150 V
VGS = 10 V
RG = 10 Ω
1
10
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
800
16
ID = 2.0 A
14
600 VDD = 450 V
300 V
150 V
400
12
VGS
10
8
6
200
4
2
VDS
0
0
0
4
8
12
16
QG - Gate Charge - nC
Data Sheet D13336EJ3V0DS
5
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