2SK3113 Просмотр технического описания (PDF) - NEC => Renesas Technology
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2SK3113 Datasheet PDF : 8 Pages
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2SK3113
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS
VDS = 600 V, VGS = 0 V
Gate Leakage Current
IGSS
VGS = ±30 V, VDS = 0 V
Gate Cut-off Voltage
VGS(off) VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
| yfs | VDS = 10 V, ID = 1.0 A
Drain to Source On-state Resistance
RDS(on) VGS = 10 V, ID = 1.0 A
Input Capacitance
Ciss
VDS = 10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss
f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 150 V, ID = 1.0 A
Rise Time
tr
VGS = 10 V
Turn-off Delay Time
td(off)
RG = 10 Ω, RL = 10 Ω
Fall Time
tf
Total Gate Charge
QG
VDD = 450 V
Gate to Source Charge
QGS
VGS = 10 V
Gate to Drain Charge
QGD ID = 2.0 A
Body Diode Forward Voltage
VF(S-D) IF = 2.0 A, VGS = 0 V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 2.0 A, VGS = 0 V
Qrr
di/dt = 50 A/µs
MIN. TYP. MAX. UNIT
100 µA
±10 µA
2.5
3.5 V
0.5
S
3.3 4.4 Ω
290
pF
60
pF
5
pF
7
ns
2
ns
22
ns
9
ns
9
nC
2.4
nC
2
nC
0.9
V
0.9
µs
2.0
µC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
L
PG.
50 Ω
VDD
VGS = 20 → 0 V
ID
VDD
IAS BVDSS
VDS
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle ≤ 1%
RL
VDD
VGS
VGS
Wave Form
0 10%
VGS
90%
ID
90%
ID
Wave Form
0 10%
td(on)
ID
tr td(off)
90%
10%
tf
ton
toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
2
Data Sheet D13336EJ3V0DS
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