2SK1335L Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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производитель

2SK1335L

Silicon N-Channel MOS FET

Hitachi -> Renesas Electronics 

2SK1335(L), 2SK1335(S)

Absolute Maximum Ratings (Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body to drain diode reverse drain current

Channel dissipation

Channel temperature

Storage temperature

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at TC = 25°C

Symbol

VDSS

VGSS

ID

I *1

D(pulse)

I DR

Pch*2

Tch

Tstg

Ratings

Unit

200

V

±20

V

3

A

12

A

3

A

20

W

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Drain to source breakdown

voltage

V(BR)DSS 200

—

Gate to source breakdown

voltage

V(BR)GSS ±20

—

Gate to source leak current

I GSS

—

—

Zero gate voltage drain current IDSS

—

—

Gate to source cutoff voltage VGS(off) 2.0

—

Static drain to source on state RDS(on) —

0.5

resistance

Forward transfer admittance |yfs|

1.5

2.3

Input capacitance

Ciss —

380

Output capacitance

Coss —

150

Reverse transfer capacitance Crss —

35

Turn-on delay time

t d(on)

—

10

Rise time

tr

—

27

Turn-off delay time

t d(off)

—

30

Fall time

tf

—

20

Body to drain diode forward VDF

—

1.0

voltage

Body to drain diode reverse trr

recovery time

—

120

Note: 1. Pulse test

Max

—

—

±10

100

4.0

0.8

—

—

—

—

—

—

—

—

—

—

Unit

V

V

µA

µA

V

Ω

S

pF

pF

pF

ns

ns

ns

ns

V

ns

Test conditions

ID = 10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±16 V, VDS = 0

VDS = 160 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 2 A, VGS = 10 V *1

ID = 2 A, VDS = 10 V *1

VDS = 10 V, VGS = 0,

f = 1 MHz

ID = 2 A, VGS = 10 V,

RL = 15 Ω

IF = 3 A, VGS = 0

IF = 3 A, VGS = 0,

diF/dt = 50 A/µs

2

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