2SK1335L Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
2SK1335L Datasheet PDF : 8 Pages
| |||
1,000
500
Body to Drain Diode Reverse
Recovery Time
di/dt = 50 A/µs, VGS = 0
Ta = 25°C
Pulse Test
200
100
50
20
10
0.05 0.1 0.2 0.5 1 2
5
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
500
20
400
VDD = 50 V
16
100 V
150 V
300
12
VGS
200 VDS
8
100
VDD = 150 V
100 V
50 V
ID = 3 A 4
0
0
4
8
12 16 20
Gate Charge Qg (nc)
2SK1335(L), 2SK1335(S)
1,000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
100
Coss
10
Crss
VGS = 10V
Pulse Test
1
0
10 20
30
40 50
Drain to Source Voltage VDS (V)
Switching Characteristics
500
VGS = 10 V
VDD
=•
•
30
V
PW = 2 µs, duty < 1%
200
100
50
td (off)
20
tr
10
tf
td (on)
5
0.05 0.1 0.2 0.5 1 2
3
Drain Current ID (A)
5
Share Link: 