2SJ496 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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Компоненты Описание

производитель

2SJ496

Silicon P-Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SJ496

Main Characteristics

Power vs. Temperature Derating

1.6

1.2

0.8

0.4

0

50

100

150

200

Ambient Temperature Ta (°C)

Maximum Safe Operation Area

–100

–30

–10

–3

–1

–0.3

–0.1

Operation in

this area is

DC OpPeWra(t1=ios11nh01mo0mts)01s0µsµs

limited by R DS(on)

–0.03

–0.01 Ta = 25 °C

–0.1 –0.3 –1 –3 –10 –30 –100

Drain to Source Voltage V DS (V)

Typical Output Characteristics

–10

–10 V

–5 V

–3.5 V

–8

–4 V

Ta = 25°C

Pulse Test

–6

–3 V

–4

–2

–2.5 V

VGS = –2 V

0

–2 –4 –6 –8 –10

Drain to Source Voltage V DS (V)

Typical Transfer Characteristics

–10

V DS = –10 V

Pulse Test

–8

–6

–4

Tc = 75 °C

25 °C

–2

–25 °C

0

–1 –2 –3 –4 –5

Gate to Source Voltage V GS (V)

4

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