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Компоненты Описание
2SJ496 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
2SJ496
Silicon P-Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
2SJ496 Datasheet PDF : 10 Pages
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2SJ496
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
1
Ta = 25
°
C
0.5
0.3
0.2
0.1
0.1
0.05
0.03
0.02
0.01
0.01
0.003
1shot
pulse
0.001
0.00001 0.0001 0.001
θ
ch – a(t) =
γ
s (t) •
θ
ch – a
θ
ch – a = 139
°
C/W, Ta = 25
°
C
PDM
PW
T
D=
PW
T
0.01 0.1
1
10
Pulse Width PW (S)
100 1000 10000
Switching Time Test Circuit
Vin Monitor
D.U.T.
Vout
Monitor
R
L
Vin
10 V
50
Ω
V
DD
= –30 V
Switching Time Waveforms
Vin
10%
90%
90%
90%
Vout
td(on)
10%
tr
td(off)
10%
t
f
8
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