2SJ496 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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производитель
2SJ496 Datasheet PDF : 10 Pages
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2SJ496
Silicon P-Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS(on) = 0.12Ω typ. (at VGS = –10 V, ID = –2.5 A)
• 4V gate drive devices.
• Large current capacitance
ID = –5 A
Outline
TO-92 Mod
ADE-208-482
1st. Edition
D
321
1. Source
G
2. Drain
3. Gate
S
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