D959 Просмотр технического описания (PDF) - Inchange Semiconductor
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D959 Datasheet PDF : 5 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD959
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
·Complement to type 2SB867
·Excellent linearity of hFE
APPLICATIONS
·For power switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
固IN电C半H导AN体GE SEMICONDUTOR Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
CONDITIONS
Open emitter
Open base
VALUE
130
80
UNIT
V
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current (DC)
3
A
ICM
Collector current-peak
6
A
PC
Collector power dissipation
TC=25℃
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
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