D959 Просмотр технического описания (PDF) - Inchange Semiconductor
Номер в каталоге
Компоненты Описание
производитель
D959 Datasheet PDF : 5 Pages
| |||
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD959
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IE=0
80
V
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.1A
0.5
V
VBEsat
ICBO
IEBO
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
IC=2A; IB=0.1A
VCB=100V;IE=0
VEB=5V; IC=0
1.5
V
10
μA
50
μA
hFE-1
DC current gain
IC=0.1A ; VCE=2V
45
hFE-2
DC current gain
IC=0.5A ; VCE=2V
60
260
fT
Transition frequency
IC=0.5A ; VCE=10V
30
MHz
Switching times
固IN电C半H导AN体GE SEMICONDUTOR ton
Turn-on time
ts
Storage time
tf
Fall time
IC=0.5A
IB1=-IB2=50mA
0.5
2.5
0.15
hFE-2 classifications
μs
μs
μs
R
Q
P
60-120 90-180 130-260
2
Share Link: 