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2SC3868 Просмотр технического описания (PDF) - Inchange Semiconductor

Номер в каталоге
Компоненты Описание
производитель
2SC3868
Iscsemi
Inchange Semiconductor Iscsemi
2SC3868 Datasheet PDF : 3 Pages
1 2 3
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3868
DESCRIPTION
·
·With TO-220Fa package
·High breakdown voltage
·Wide area of safe operation
APPLICATIONS
·For high speed switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Absolute maximum ratings(Ta=25)
固IN电C半H导AN体GE SEMICONDUCTOR SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
VALUE
500
400
7
UNIT
V
V
V
IC
Collector current (DC)
2
A
ICM
Collector current (pulse)
4
A
IB
Base current (DC)
0.5
A
Ta=25
PC
Collector power dissipation
TC=25
2
W
25
Tj
Junction temperature
Tstg
Storage temperature
150
-55~150

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