2SC3868 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SC3868 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3868
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=10mA ;IB=0
400
V
VCEsat Collector-emitter saturation voltage IC=1A ;IB=0.2A
1.0
V
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=1A ;IB=0.2A
VCB=500V; IE=0
VEB=5V; IC=0
1.5
V
100 μA
100 μA
hFE-1
DC current gain
IC=0.1A ; VCE=5V
15
hFE-2
DC current gain
IC=1A ; VCE=5V
8
fT
Transition frequency
固IN电C半H导AN体GE SEMICONDUCTOR Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=0.2A ; VCE=10V
IC=1A ;IB=0.2A;IB2=-0.4A
VCC=150V
30
MHz
0.7 μs
2.0 μs
0..3 μs
2
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