18N50 Просмотр технического описания (PDF) - Unisonic Technologies

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18N50

18A, 500V N-CHANNEL POWER MOSFET

Unisonic Technologies 

18N50

Power MOSFET

„ ABSOLUTE MAXIMUM RATINGS (unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain to Source Voltage

VDSS

500

V

Gate to Source Voltage

VGSS

±30

V

Drain Current

Continuous

ID

Pulsed (Note 2)

IDM

18

A

72 (Note 5)

A

Avalanche Energy

Single Pulsed (Note 3)

EAS

Repetitive (Note 2)

EAR

945

mJ

23.5

mJ

Avalanche Current (Note 2)

IAR

18

A

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

TO-220F1

38.5

Power Dissipation TO-220F2

PD

40.5

W

TO-263

23.5

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L=5.2mH, IAS=18A, VDD=50V, RG=25Ω, Starting TJ=25°C

4. ISD ≤18A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C

5. Drain current limited by maximum junction temperature

„ THERMAL DATA

PARAMETER

Junction to Ambient

TO-220F1

Junction to Case

TO-220F2

TO-263

SYMBOL

θJA

θJc

RATINGS

62.5

3.3

3.0

0.53

UNIT

°C/W

°C/W

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 6

QW-R502-477.G

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