18N50 Просмотр технического описания (PDF) - Unisonic Technologies

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18N50

18A, 500V N-CHANNEL POWER MOSFET

Unisonic Technologies 

18N50

Power MOSFET

„ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS VGS=0V, ID=250µA

Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=250μA,Referenced to 25°C

Drain-Source Leakage Current

IDSS

VDS=500V, VGS=0V

VDS=400V, TC=125°C

Forward

Gate-Source Leakage Current

Reverse

ON CHARACTERISTICS

IGSS

VGS = 30 V, VDS = 0 V

VGS = -30 V, VDS = 0 V

Gate Threshold Voltage

VGS(TH) VDS=VGS, ID=250µA

Drain-Source On-State Resistance

RDS(ON) VGS=10V, ID=9A

Forward Transconductance

DYNAMIC PARAMETERS

gFS VDS=40V, ID=9A (Note 1)

Input Capacitance

CISS

Output Capacitance

COSS VDS=25V,VGS=0V,f=1.0MHz

Reverse Transfer Capacitance

SWITCHING PARAMETERS

CRSS

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

QG

QGS

VDS=400V, VGS=10V, ID=18A

(Note 1,2)

QGD

Turn-ON Delay Time

tD(ON)

Turn-ON Rise Time

Turn-OFF Delay Time

tR

tD(OFF)

VDD=250V, ID=18A,

RG=25Ω (Note 1,2)

Turn-OFF Fall Time

tF

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

IS

Maximum Body-Diode Pulsed Current

ISM

Drain-Source Diode Forward Voltage

VSD IS =18A, VGS=0V

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

trr

VGS=0V, IS=18A,

QRR dIF/dt=100A/μs (Note 1)

Note: 1. Pulse Test : Pulse width≤300μs, Duty cycle≤2%

2. Essentially independent of operating temperature

MIN TYP MAX UNIT

500

V

0.5

V/°C

1 µA

10 µA

100

nA

-100

2.0

4.0 V

0.24 0.32 Ω

25

S

2200 2860 pF

330 430 pF

25 40 pF

45 60 nC

12.5

nC

19

nC

55 120 ns

165 340 ns

95 200 ns

90 190 ns

18 A

72 A

1.4 V

500

ns

5.4

μC

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

3 of 6

QW-R502-477.G

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