2SK2929 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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2SK2929

Silicon N Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SK2929

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown voltage V(BR)DSS 60

Gate to source breakdown voltage V(BR)GSS ±20

Gate to source leak current

I GSS

—

Zero gate voltage drain current

I DSS

—

Gate to source cutoff voltage

VGS(off)

1.5

Static drain to source on state

RDS(on)

—

resistance

RDS(on)

—

Forward transfer admittance

|yfs|

11

Input capacitance

Ciss —

Output capacitance

Coss —

Reverse transfer capacitance

Crss —

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Body–drain diode forward voltage VDF

—

Body–drain diode reverse

recovery time

t rr

—

Note: 4. Pulse test

Typ Max Unit

—

—

V

—

—

V

—

±10 µA

—

10

µA

—

2.5 V

0.026 0.034 Ω

0.045 0.07 Ω

17

—

S

740 —

pF

380 —

pF

140 —

pF

10

—

ns

160 —

ns

100 —

ns

150 —

ns

0.95 —

V

40

—

ns

Test Conditions

ID = 10mA, VGS = 0

IG = ±100µA, VDS = 0

VGS = ±16V, VDS = 0

VDS = 60 V, VGS = 0

ID = 1mA, VDS = 10V

ID = 15A, VGS = 10VNote4

ID = 15A, VGS = 4V Note4

ID = 15A, VDS = 10V Note4

VDS = 10V

VGS = 0

f = 1MHz

ID = 15A, VGS = 10V

RL = 2Ω

IF = 25A, VGS = 0

IF = 25A, VGS = 0

diF/ dt =50A/µs

3

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