2SK2929 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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производитель
2SK2929 Datasheet PDF : 10 Pages
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2SK2929
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
1.0
Pulse Test
0.8
0.6
0.4
I D = 15 A
10 A
0.2
5A
0
4
8
12 16 20
Gate to Source Voltage V GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
0.5
Pulse Test
0.2
0.1
0.05
VGS = 4 V
10 V
0.02
0.01
0.1 0.2 0.5 1 2 5 10 20 50
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
0.10
Pulse Test
0.08
10 A
0.06
V GS = 4 V
2, 5 A
0.04
2, 5, 10 A
0.02
10 V
0
–40
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
50
Tc = –25 °C
20
10
25 °C
5
75 °C
2
1
0.5
0.1
V DS = 10 V
Pulse Test
0.3 1 3 10 30 100
Drain Current I D (A)
5
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