2SA1188DTZ-E Просмотр технического описания (PDF) - Renesas Electronics

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Компоненты Описание

производитель

2SA1188DTZ-E

Silicon PNP Epitaxial

Renesas Electronics 

2SA1188

Electrical Characteristics

Item

Symbol Min

Collector to base breakdown voltage

V(BR)CBO

–90

Collector to emitter breakdown voltage V(BR)CEO –90

Emitter to base breakdown voltage

V(BR)EBO

–5

Collector cutoff current

ICBO

—

Emitter cutoff current

DC current trnsfer ratio

IEBO

—

hFE*1

250

Collector to emitter saturation voltage

VCE(sat)

—

Base to emitter saturation voltage

Gain bandwidth product

VBE(sat)

—

fT

—

Collector output capacitance

Cob

—

Notes: 1. The 2SA1188 is grouped by hFE as follows.

2. Pulse test

D

E

250 to 500 400 to 800

Typ Max

—

—

—

—

—

—

— –0.1

— –0.1

—

800

–0.05 –0.15

–0.7 –1.0

130

—

3.2

—

Unit

V

V

V

µA

µA

V

V

MHz

pF

(Ta = 25°C)

Test conditions

IC = –10 µA, IE = 0

IC = –1 mA, RBE = ∞

IE = –10 µA, IC = 0

VCB = –70 V, IE = 0

VEB = –2 V, IC = 0

VCE = –12 V,

IC = –2 mA*2

IC = –10 mA,

IB = –1 mA*2

VCE = –6 V,

IC = –10 mA

VCB = –10 V, IE = 0,

f = 1 MHz

Rev.3.00 Aug 10, 2005 page 2 of 6

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