2SA1188DTZ-E Просмотр технического описания (PDF) - Renesas Electronics
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производитель
2SA1188DTZ-E Datasheet PDF : 7 Pages
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2SA1188
–1,000
–100
Emitter Cutoff Current vs.
Emitter to Base Voltage
IC = 0
Ta = 75°C
–10
25
–1.0
–25
–0.1
0
–2 –4 –6 –8 –10
Emitter to Base Voltage VEB (V)
DC Current Transfer Ratio vs.
Collector Current
1,000
Ta = 75°C
300
–25
25
100
30
10
–1
VCE = –12 V
Pulse
–3
–10
–30
–100
Collector Current IC (mA)
Base to Emitter Saturation Voltage vs.
Collector Current
–10
IC = 10 IB
Pulse
–3
25
–1.0
Ta = –25°C
75
–0.3
–0.1
–1
–3
–10 –30
–100
Collector Current IC (mA)
Collector to Emitter Breakdown Voltage vs.
Base to Emitter Resistance
–190
–180
Typical Value
IC = –1 mA
–170
–160
–150
–140
10
100
1k
10 k 100 k
Base to Emitter Resistance RBE (Ω)
Collector to Emitter Saturation Voltage vs.
Collector Current
–1.0
IC = 10 IB
Pulse
–0.3
–0.1
–0.03
Ta = 75°C
–25
25
–0.01
–1
–3
–10 –30
–100
Collector Current IC (mA)
Gain Bandwidth Product vs.
Collector Current
1,000
VCE = –6 V
500
200
100
50
20
10
–0.5 –1.0 –2
–5 –10 –20 –50
Collector Current IC (mA)
Rev.3.00 Aug 10, 2005 page 4 of 6
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