SI3850ADV(2006) Просмотр технического описания (PDF) - Vishay Semiconductors

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Компоненты Описание

производитель

SI3850ADV
(Rev.:2006)

Complementary MOSFET Half-Bridge (N- and P-Channel)

Vishay Semiconductors 

Si3850ADV

Vishay Siliconix

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted

1

Duty Cycle = 0.5

0.2

0.1

0.1

0.05

0.02

0.01

10-4

Notes:

PDM

Single Pulse

t1

t2

1. Duty Cycle, D =

t1

t2

2. Per Unit Base = RthJA = 100 °C/W

3. TJM – TA = PDMZthJA(t)

4. Surface Mounted

10-3

10-2

10-1

1

10

100

1000

Square Wave Pulse Duration (sec)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-

nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability

data, see http://www.vishay.com/ppg?73789.

www.vishay.com

8

Document Number: 73789

S-60470-Rev. A, 27-Mar-06

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