Si3850ADV
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
2.5
2.0
VGS = 5 thru 4 V
2.0
1.6
3.5 V
1.5
1.2
3V
1.0
0.8
2.5 V
0.5
0.4
2V
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS – Drain-to-Source Voltage (V)
Output Characteristics
0.0
0
2.5
110
2.0
VGS = 2.5 V
88
1.5
VGS = 3 V
66
1.0
44
VGS = 4.5 V
0.5
22
- 55 °C
25 °C
TC = 125 °C
1
2
3
4
5
VGS – Gate-to-Source Voltage (V)
Transfer Characteristics
Ciss
Coss
Crss
0.0
0.0
0.5
1.0
1.5
2.0
2.5
ID – Drain Current (A)
On-Resistance vs. Drain Current
10
ID = 1 A
8
6
VDS = 5 V
VDS = 10 V
VGS = 15 V
4
2
0
0.0
0.5
1.0
1.5
2.0
2.5
Qg – Total Gate Charge (nC)
Gate Charge
0
0
4
8
12
16
20
VDS – Drain-to-Source Voltage (V)
Capacitance
1.8
ID = 0.5 A
1.6
VGS = 3 V
1.4
VGS = 4.5 V
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ – Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Document Number: 73789
S-60470-Rev. A, 27-Mar-06