SI3850ADV(2006) Просмотр технического описания (PDF) - Vishay Semiconductors

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производитель

SI3850ADV
(Rev.:2006)

Complementary MOSFET Half-Bridge (N- and P-Channel)

Vishay Semiconductors 

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted

10

3.0

TJ = 150 °C

2.4

1

25 °C

1.8

0.1

1.2

0.01

0.6

Si3850ADV

Vishay Siliconix

125 °C

25 °C

0.001

0.0

0.4

0.8

1.2

1.6

2.0

VSD – Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

0.4

0.3

ID = 250 µA

0.2

0.1

ID = 5 mA

0.0

- 0.1

- 0.2

- 50 - 25

0 25 50 75 100 125 150

TJ – Temperature (°C)

Threshold Voltage

10

0.0

0

1

2

3

4

5

VGS – Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

30

24

18

12

6

0

0.001

0.01

0.1

1

10

Time (sec)

Single Pulse Power vs. Junction-to-Ambient

*Limited by rDS(on)

1

1 ms

10 ms

0.1

TA = 25 °C

Single Pulse

100 ms

1s

10 s

dc

0.01

0.1

BVDSS Limited

1

10

100

VDS – Drain-to-Source Voltage (V)

* VGS minimum VGS at which rDS(on) is specified

Safe Operating Area

Document Number: 73789

S-60470-Rev. A, 27-Mar-06

www.vishay.com

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