MGSF2N02ELT3 Просмотр технического описания (PDF) - ON Semiconductor
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MGSF2N02ELT3 Datasheet PDF : 8 Pages
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MGSF2N02EL
Power MOSFET
2.8 Amps, 20 Volts
N–Channel SOT–23
These miniature surface mount MOSFETs low RDS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry.
Features
• Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Miniature SOT–23 Surface Mount Package Saves Board Space
• IDSS Specified at Elevated Temperature
Applications
• DC–DC Converters
• Power Management in Portable and Battery Powered Products, ie:
Computers, Printers, PCMCIA Cards, Cellular and Cordless
Telephones
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbo Value
l
Drain–to–Source Voltage
Gate–to–Source Voltage – Continuous
Drain Current
– Continuous @ TA = 25°C
– Single Pulse (tp = 10 ms)
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature Range
VDSS
VGS
20
± 8.0
ID
IDM
PD
TJ, Tstg
2.8
5.0
1.25
– 55 to
150
Thermal Resistance – Junction–to–Ambient
(Note 1)
RθJA
100
Thermal Resistance – Junction–to–Ambient
300
(Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
TL
260
1. 1” Pad, t < 10 sec.
2. Min pad, steady state.
Unit
Vdc
Vdc
A
W
°C
°C/W
°C
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
http://onsemi.com
2.8 AMPS
20 VOLTS
RDS(on) = 85 mW (max)
N–Channel
D
G
S
MARKING
DIAGRAM
3
SOT–23
NT
CASE 318
W
1
STYLE 21
2
NT
= Device Code
W
= Work Week
PIN ASSIGNMENT
3
Drain
1
2
Gate
Source
ORDERING INFORMATION
Device
Package
Shipping
MGSF2N02ELT1 SOT–23 3000 Tape & Reel
MGSF2N02ELT3 SOT–23 10,000 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2002
1
April, 2002 – Rev. 1
Publication Order Number:
MGSF2N02EL/D
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