MGSF2N02ELT3 Просмотр технического описания (PDF) - ON Semiconductor

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производитель

MGSF2N02ELT3

Power MOSFET 2.8 Amps, 20 Volts N–Channel SOT–23

ON Semiconductor 

MGSF2N02EL

350

5

300

TJ = 25°C

QT

4

250

200

3

Q1

Q2

150

Ciss

2

100

Coss

50

Crss

0

0

4

8

12

16

20

GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation

1

ID = 3.6 A

TJ = 25°C

0

0

1

2

3

Qg, TOTAL GATE CHARGE, (nC)

Figure 8. Gate–to–Source Voltage vs. Total Charge

1000

100

VDD = 16 V

ID = 2.8 A

VGS = 4.5 V

tf

tr

td(off)

10

td(on)

1

1

10

100

RG, GATE RESITANCE (W)

Figure 9. Resistive Switching Time Variation vs.

Gate Resistance

1.8

VGS = 4.5 V

1.5 TJ = 25°C

1.2

0.9

0.6

0.3

0

0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00

VSD, SOURCE–TO–DRAIN VOLTAGE (V)

Figure 10. Diode Forward Voltage vs. Current

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4

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