RFD16N06 Просмотр технического описания (PDF) - Intersil
Номер в каталоге
Компоненты Описание
производитель
RFD16N06 Datasheet PDF : 7 Pages
| |||
Semiconductor
September 1998
RFD16N06,
RFD16N06SM
16A, 60V, 0.047 Ohm,
N-Channel Power MOSFET
[ /Title
(RFD16
N06,
RFD16
N06SM)
/Sub-
ject
(16A,
60V,
0.047
Ohm,
N-Chan-
nel
Power
MOS-
FET)
/Author
()
/Key-
words
(Harris
Semi-
conduc-
tor, N-
Chan-
nel
Power
MOS-
FET,
TO-
251AA,
TO-
252AA)
/Cre-
Features
• 16A, 60V
• rDS(ON) = 0.047Ω
• Temperature Compensating PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
Description
These N-Channel power MOSFETs are manufactured using
the MegaFET process. This process which uses feature
sizes approaching those of LSI integrated circuits, gives opti-
mum utilization of silicon, resulting in outstanding perfor-
mance. They were designed for use in applications such as
switching regulators, switching converters, motor drivers,
and relay drivers. These transistors can be operated directly
from integrated circuits.
Formerly developmental type TA09771.
Symbol
DRAIN
PART NUMBER
PACKAGE
BRAND
RFD16N06
TO-251AA
F16N06
RFD16N06SM
TO-252AA
F16N06
NOTE: When ordering, use the entire part number. Add suffix 9A to ob-
tain the TO-252AA variant in tape and reel, i.e., RFD16N06SM9A.
GATE
SOURCE
Packaging
JEDEC TO-251AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-252AA
DRAIN
(FLANGE)
GATE
SOURCE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1998
5-1
File Number 4087.1
Share Link: 