RFD16N06 Просмотр технического описания (PDF) - Intersil
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RFD16N06 Datasheet PDF : 7 Pages
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RFD16N06, RFD16N06SM
Absolute Maximum Ratings TC = 25oC
RFD16N06, RFD16N06SM
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
60
60
16
Refer to Peak Current Curve
±20
Refer to UIS Curve
72
0.48
-55 to 175
300
260
V
V
A
V
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
BVDSS ID = 250µA, VGS = 0V
60
Gate Threshold Voltage
VGS(TH) VGS = VDS, ID = 250µA
2
Zero Gate Voltage Drain Current
IDSS VDS = Rated BVDSS, VGS = 0V
-
VDS
TC =
= 0.8 x
150oC
Rated
BVDSS,
-
Gate to Source Leakage Current
IGSS VGS = ±20V
-
Drain to Source On Resistance (Note 2) rDS(ON) ID = 16A, VGS = 10V (Figure 9)
-
Turn-On Time
Turn-On Delay Time
Rise Time
tON
VDD = 30V, ID ≈ 8A, RL = 3.75Ω,
-
td(ON)
VGS = 10V, RG = 25Ω
(Figures 13, 16, 17)
-
tr
-
Turn-Off Delay Time
td(OFF)
-
Fall Time
tf
-
Turn-Off Time
tOFF
-
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Qg(TOT) VGS = 0V to 20V VDD = 48V, ID = 16A,
-
Qg(10)
VGS = 0V to 10V
RL = 3Ω, IG(REF) = 0.8mA
(Figures 18, 19)
-
Qg(TH) VGS = 0V to 2V
-
Input Capacitance
CISS VDS = 25V, VGS = 0V, f = 1MHz
-
Output Capacitance
COSS
-
Reverse Transfer Capacitance
CRSS
-
Thermal Resistance Junction to Case
RθJC
-
Thermal Resistance Junction to Ambient
RθJA TO-251 and TO-252
-
TYP MAX UNITS
-
-
V
-
4
V
-
1
µA
-
25
µA
- ±100 nA
- 0.047 Ω
-
65
ns
14
-
ns
30
-
ns
55
-
ns
30
-
ns
-
125
ns
-
80
nC
-
45
nC
-
2.2
nC
900
-
pF
325
-
pF
100
-
pF
- 2.083 oC/W
-
100 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Source to Drain Diode Voltage
VSD
ISD = 16A
-
-
1.5
V
Diode Reverse Recovery Time
trr
ISD = 16A, dISD/dt = 100A/µs
-
-
125 ns
NOTES:
2. Pulse test: pulse width ≤ 300ms, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
5-2
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