SPI21N10 Просмотр технического описания (PDF) - Infineon Technologies

Номер в каталоге

Компоненты Описание

производитель

SPI21N10

SIPMOS® Power-Transistor

Infineon Technologies 

Preliminary data

SPI21N10

SPP21N10,SPB21N10

9 Drain-source on-state resistance

RDS(on) = f (Tj)

parameter : ID = 15.0 A, VGS = 10 V

SPP21N10

340

m

280

10 Typ. gate threshold voltage

VGS(th) = f (Tj)

parameter: VGS = VDS

4

V

240

200

3

ID=0.25mA

160

120

98%

80

typ

40

2.5

2

ID=44µA

0

-60 -20 20 60 100 140 °C 200

Tj

11 Typ. capacitances

C = f (VDS)

parameter: VGS=0V, f=1 MHz

10 4

1.5

-65 -35 -5 25 55 85 115 °C 175

Tj

12 Forward character. of reverse diode

IF = f (VSD)

parameter: Tj , tp = 80 µs

10 2 SPP21N10

pF

A

10 3

Ciss

10 1

10 2

10 1

0

Coss

Crss

5 10 15 20 25 30 V 40

VDS

Page 6

10 0

10 -1

0

Tj = 25 °C typ

Tj = 175 °C typ

Tj = 25 °C (98%)

Tj = 175 °C (98%)

0.4 0.8 1.2 1.6

2 2.4 V 3

VSD

2002-01-31

Share Link: