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Компоненты Описание
SPI21N10 Просмотр технического описания (PDF) - Infineon Technologies
Номер в каталоге
Компоненты Описание
производитель
SPI21N10
SIPMOS® Power-Transistor
Infineon Technologies
SPI21N10 Datasheet PDF : 8 Pages
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Preliminary data
SPI21N10
SPP21N10,SPB21N10
1 Power dissipation
P
tot
=
f
(
T
C
)
100
SPP21N10
W
2 Drain current
I
D
=
f
(
T
C
)
parameter:
V
GS
10 V
SPP21N10
24
A
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160
°C
190
T
C
3 Safe operating area
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
C
= 25 °C
10
2
SPP21N10
t
p
= 6.8µs
10 µs
A
10
1
100 µs
10
0
1 ms
10 ms
DC
20
18
16
14
12
10
8
6
4
2
0
0 20 40 60 80 100 120 140 160
°C
190
T
C
4 Transient thermal impedance
Z
thJC
=
f
(
t
p
)
parameter :
D
=
t
p
/
T
10
1
SPP21N10
K/W
10
0
10
-1
10
-2
10
-3
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
-1
10
-1
10
0
10
1
10
2
V
10
3
V
DS
10
-4
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
Page 4
2002-01-31
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