MTN1308E3 Просмотр технического описания (PDF) - Cystech Electonics Corp.
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MTN1308E3 Datasheet PDF : 6 Pages
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CYStech Electronics Corp.
Spec. No. : C440E3
Issued Date : 2009.02.23
Revised Date :
Page No. : 2/6
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current @TC=100°C
Pulsed Drain Current @ VGS=10V (Note 1)
Avalanche Current
Single Pulse Avalanche Energy @ L=0.5mH, ID=40 A, RG=25Ω
Repetitive Avalanche Energy @ L=0.1mH (Note 2)
Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm)
from case for 10 seconds
Maximum Temperature for Soldering @ Package Body for 10
seconds
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
Note : *1.Pulse width limited by maximum junction temperature.
*2. Duty ≤ 1%
Symbol Limits
Unit
VDS
75
V
VGS
±30
V
ID
80
A
ID
55
A
IDM
200
A
IAS
40
A
EAS
400
mJ
EAR
80
TL
300
°C
TPKG
260
Pd
230
1.87
Tj, Tstg -55~+175
°C
W
W/°C
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
0.65
62.5
Unit
°C/W
°C/W
MTN1308E3
CYStek Product Specification
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