CYStech Electronics Corp.
Spec. No. : C440E3
Issued Date : 2009.02.23
Revised Date :
Page No. : 3/6
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
IDSS
IDON
RDS(ON)
GFS
Dynamic
Qg
Qgs
Qgd
td(ON)
tr
td(OFF)
tf
Ciss
Coss
Crss
Rg
75
-
-
V
1.5
2.5
4.0
V
-
-
±100
nA
-
-
1
μA
-
-
25
μA
80
-
-
A
-
10.5
13
mΩ
-
38
-
S
-
42
-
-
19
-
nC
-
17
-
-
25
-
-
200
-
-
100
-
ns
-
120
-
-
10587
-
-
340
-
pF
-
242
-
-
2
-
Ω
Source-Drain Diode
IS
-
-
80
A
ISM
-
-
200
VSD
-
-
1.3
V
trr
-
120
-
ns
Qrr
-
380
-
nC
Note : 1. Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
2. Independent of operating temperature
3. Pulse width limited by maximum junction temperature.
VGS=0, ID=250μA
VDS = VGS, ID=250μA
VGS=±30
VDS =60V, VGS =0
VDS =50V, VGS =0, Tj=125°C
VDS =10V, VGS=10V
(Note 1)
VGS =10V, ID=30A
(Note 1)
VDS =5V, ID=30A
(Note 1)
VDS=80V, ID=30A, VGS=10V
(Note 1 & 2)
VDS=50V, ID=1A, VGS=10V,
RGS=6Ω (Note 1 & 2)
VGS=0V, VDS=25V, f=1MHz
VGS=15mV, VDS=0V, f=1MHz
IS=80A, VGS=0V
(Note 3)
(Note 1)
VGS=0, IF=25A, dIF/dt=100A/μs
Ordering Information
Device
MTN1308E3
Package
TO-220
(RoHS compliant)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Marking
13N08
MTN1308E3
CYStek Product Specification