Philips Semiconductors
UHF power transistor
Product specification
BLT71/8
FEATURES
• High efficiency
• Very high gain
• Internal pre-matched input
• Low supply voltage.
PINNING - SOT96-1
PIN
1, 8
2, 4, 5, 7
3, 6
SYMBOL
b
e
c
DESCRIPTION
base
emitter
collector
APPLICATIONS
• Hand-held radio equipment in common emitter class-AB handbook, halfpage
8
5
operation for the 900 MHz communication band.
DESCRIPTION
NPN silicon planar epitaxial power transistor encapsulated
in a SOT96-1 (SO8) plastic SMD package.
1
Top view
4
MBK187
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Ts ≤ 60 °C in a common emitter test circuit.
MODE OF OPERATION
f
(MHz)
VCE
(V)
PL
(W)
CW, class-AB
900
4.8
1.2
Gp
(dB)
≥11
typ. 13
ηC
(%)
≥55
typ. 63
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
Ptot
Tstg
Tj
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
CONDITIONS
open emitter
open base
open collector
Ts = 60 °C; VCE ≤ 6.5 V; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
MIN.
−
−
−
−
−
−65
−
MAX.
16
8
2.5
500
2.9
+150
175
UNIT
V
V
V
mA
W
°C
°C
1997 Oct 14
2