BLT71/8 Просмотр технического описания (PDF) - Philips Electronics
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BLT71/8 Datasheet PDF : 12 Pages
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Philips Semiconductors
UHF power transistor
Product specification
BLT71/8
12
handbook, halfpage
Zi
(Ω)
8
4
MBK264
ri
xi
0
800
850
900
950
1000
f (MHz)
10
handbook, halfpage
ZL
(Ω)
8
6
4
2
0
800
850
MBK265
RL
XL
900
950
1000
f (MHz)
VCE = 4.8 V; ICQ = 3 mA; PL = 1.2 W; Tamb = 25 °C.
Fig.8 Input impedance as a function of frequency
(series components); typical values.
VCE = 4.8 V; ICQ = 3 mA; PL = 1.2 W; Tamb = 25 °C.
Fig.9 Load impedance as a function of frequency
(series components); typical values.
16
handbook, halfpage
Gp
(dB)
12
MGD195
8
4
0
850
900
950
1000
f (MHz)
VCE = 4.8 V; ICQ = 3 mA; PL = 1.2 W; Tamb = 25 °C.
Fig.10 Power gain as a function of frequency
(series components); typical values.
1997 Oct 14
handbook, halfpage
23.4
Zi
ZL
Zi
ZL
MGD196
Dimensions in mm.
Fig.11 RF test print and definition of transistor
impedance.
8
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