M69AR024BL70ZB8T(2003) Просмотр технического описания (PDF) - STMicroelectronics

Номер в каталоге

Компоненты Описание

производитель

M69AR024BL70ZB8T
(Rev.:2003)

16 Mbit (1M x16) 1.8V Supply, Asynchronous PSRAM

STMicroelectronics 

M69AR024B

Table 5. Capacitance

Symbol

Parameter(1,2)

CIN

Input Capacitance on all pins (except DQ)

COUT (2) Output Capacitance

Note: 1. Sampled only, not 100% tested.

2. Outputs deselected.

Test

Condition

Min

Max Unit

VIN = 0V

5

pF

VOUT = 0V

8

pF

Table 6. DC Characteristics

Symbol

Parameter

Test Condition

Min

Max Unit

ICC1

ICC2

VCC Active Current

VCC = 1.95V,

VIN = VIH or VIL,

E1 = VIL and E2 = VIH,

IOUT = 0mA

tAVAV Read /

tAVAV Write =

minimum

tAVAV Read /

tAVAV Write =

maximum

15

mA

3

mA

ILI Input Leakage Current

0V ≤ VIN ≤ VCC

–1

1

µA

ILO Output Leakage Current

0V ≤ VOUT ≤ VCC

–1

1

µA

IPD Deep Power Down Current

VCC = 1.95V,

E1 ≥ VCC –0.2V or E1 ≤ VIL,

VIN ≥ VCC –0.2V or VIN ≤ 0.2V

10

µA

ISB

Standby Supply Current

CMOS

VCC = 1.95V,

E1 = E2 ≥ VCC –0.3V,

IOUT = 0mA

100

µA

VIH (1) Input High Voltage

0.8VCC VCC + 0.2 V

VIL (2) Input Low Voltage

–0.2

0.4

V

VOH Output High Voltage

IOH = –0.1mA

VCC – 0.2

V

VOL Output Low Voltage

IOL = 0.1mA

0.2

V

Note: 1. The maximum DC voltage on input and I/O pins is VCC+0.2V. During voltage transitions, inputs may overshoot VCC by 1.0V for

periods of up to 5ns.

2. The minimum DC voltage on input or I/O pins is –0.3V. During voltage transitions, inputs may undershoot VSS by 1.0V for periods

of up to 5ns.

12/32

Share Link: