BSC0908NS Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание

производитель

BSC0908NS

n-Channel Power MOSFET

Infineon Technologies 

OptiMOS™ Power-MOSFET

BSC0908NS

Electrical characteristics

4

Electrical characteristics

Electrical characteristics, at Tj=25 °C, unless otherwise specified.

Table 4 Static characteristics

Parameter

Symbol

Drain-source breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

V(BR)DSS

VGS(th)

IDSS

Min.

34

1

-

-

Values

Typ.

Max.

-

-

-

2.2

0.1

1

10

100

Gate-source leakage current

IGSS

-

Drain-source on-state resistance RDS(on) -

-

Gate resistance

Transconductance

RG

-

gfs

28

10

100

10.2

12.8

6.7

8

3

-

56

Unit Note / Test Condition

V

VGS=0 V, ID=1.0 mA

VDS=VGS, ID=250 µA

µA

VDS=34 V, VGS=0 V,

Tj=25 °C

VDS=34 V, VGS=0 V,

Tj=125 °C

nA

VGS=20 V, VDS=0 V

m# VGS=4.5 V, ID=30 A,

VGS=10 V, ID=30 A,

#

S

|VDS|>2|ID|RDS(on)max,

ID=30 A

Table 5 Dynamic characteristics

Parameter

Symbol

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Min.

-

-

-

-

-

-

-

Values

Typ.

1220

445

24

4.6

2.6

16.4

2.8

Max.

-

-

-

-

-

-

-

Unit

pF

Note /

Test Condition

VGS=0 V, VDS=15 V,

f=1 MHz

ns

VDD=15 V, VGS=10 V,

ID=30 A, RG= 1.6 #

Final Data Sheet

3

3.1, 2010-10-18

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