BSC0908NS Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание

производитель

BSC0908NS

n-Channel Power MOSFET

Infineon Technologies 

OptiMOS™ Power-MOSFET

BSC0908NS

2

Maximum ratings

at Tj = 25 °C, unless otherwise specified.

Table 2 Maximum ratings

Parameter

Symbol

Values

Unit Note / Test Condition

Min. Typ. Max.

Continuous drain current

ID

-

-

49

A

VGS=10 V, TC=25 °C

31

VGS=10 V, TC=100 °C

39

VGS=4.5 V, TC=25 °C

25

VGS=4.5 V, TC=100 °C

14

VGS=10 V, TA=25 °C,

RthJA=50 K/W1))

Pulsed drain current2)

ID,pulse

-

-

196

TC=25 °C

Avalanche current, single pulse

IAS

-

-

35

Avalanche energy, single pulse

EAS

-

-

10

mJ ID=30 A,RGS=25 #

Gate source voltage

VGS

-20 -

20

V

Power dissipation

Ptot

-

-

30

W TC=25 °C

2.5

TA=25 °C, RthJA=50 K/W1))

Operating and storage temperature Tj,Tstg

-55 -

150

°C

IEC climatic category; DIN IEC 68-1

55 150 56

Ncm

1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.

PCB is vertical in still air.

2) See figure 3 for more detailed information

3

Thermal characteristics

Table 3 Thermal characteristics

Parameter

Symbol

Min.

Values

Typ.

Max.

Unit Note /

Test Condition

Thermal resistance, junction - case RthJC

-

-

4.2

°K/W bottom

20

top

Device on PCB

RthJA

-

-

50

6 cm2 cooling area1)

1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.

PCB is vertical in still air

Final Data Sheet

2

3.1, 2010-10-18

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